WebINC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 … INC6006AS1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for easy mounting. ・High voltage VCEO = 160V ・Low voltage VCE(sat) = 0.2V(MAX) ・Complementary : INA6006AS1 APPLICATION High voltage switching. OUTLINE DRAWING UNIT:mm MAXIMUM RATING(Ta=25℃)
INA6006AS1 datasheet - Transistor. Isahaya Package : Micro ; …
WebDownload INC6006AS1 Datasheet: Specifications. Isahaya Package: Micro: JEITA Package: JEDEC Package: TO-92S: AEC correspondence: Type: NPN: Collector to Emitter voltage?VCEO(V) 160: Collector current?IC(A) 0.1: Collector dissipation?PC(mW) 600: DC forward current gain hFE: 72 ? 330: Datasheet first page Image. WebHigh voltage VCEO = -150V Low voltage VCE(sat) = -0.5V(MAX) Small capacitance Cob=2.8pF(TYP) Complementary INC6006AS1. APPLICATION. PARAMETER Collector to … opengl xyzw
MAX6006AESA Analog Devices Inc./Maxim Integrated - Digi-Key
WebOrder today, ships today. MAX6006AESA – Shunt Voltage Reference IC Fixed 1.25V V ±0.2% 20 mA 8-SOIC from Analog Devices Inc./Maxim Integrated. Pricing and Availability on … WebALLPARTS PARTS LIST [I] Korea HQ. : Rm 1707, 1st Block, Ace High Tech City, 3Ga 54-20, Munrae-dong, Yeongdeungpo-gu, Seoul, Korea. ( Tel : 82-2-2634-6328 Fax : 82-2-2634-7328 ) China Office. : Rm 704, A block, Huangdu square, #3008 Yitian road, Futian district, Shenzhen city, Guangdong. province, China ( Tel : 86-755-8321-2156~7 Fax : 86-755 ... WebINA6006AS1 is a silicon PNP transistor. It is designed with high voltage. FEATURE ・High voltage VCEO = -150V ・Low voltage VCE(sat) = -0.5V(MAX) ・Small capacitance Cob=2.8pF(TYP) ・Complementary : INC6006AS1 APPLICATION Hi-Fi Audio, High voltage switching. OUTLINE DRAWING UNIT:mm MAXIMUM RATING(Ta=25℃) opengl xyz轴